Thin Film Semiconductor Devices Laboratory
Staff & Contact
| Educational Staff | Associate Prof. Kosuke O. Hara Assistant Prof. Candell Grace Paredes Quino |
|---|---|
| URL | https://sites.google.com/view/naist-tfsd-en/ |
Education and Research Activities in the Laboratory
Our research includes the development of highly functional thin film semiconductor devices and the investigation of the physical principles linking the crystal growth, texture, and physical properties of semiconductor thin films. We employ a flexible approach to research, selecting computational, data science, and experimental approaches, including density functional theory calculations, device simulations, virtual screening of materials, thin film deposition, physical property analysis, and device fabrication. A representative outcome is the design of limiting efficiency BaSi₂ solar cells using device simulation and computational material screening. By pursuing multidisciplinary research, we aim to develop researchers and engineers who are able to apply multiple approaches to issues in semiconductor devices and materials.Research Themes
1. Solar cells
We are developing new solar cells for high efficiency, thin, rare-element-free, and low-cost devices. Materials used include BaSi₂, BiI₃, and SnS. Device development is accelerated by the ideal device designs enabled by device simulations and virtual screening.2. Oxide thin film transistors
Oxide semiconductors are excellent materials that constitute efficient thin film transistors with ultralow leakage current and high mobility. We use solution combustion synthesis (SCS) to make efficient transistors by solution processes at relatively low temperatures.3. Structure/properties of silicide semiconductor thin films
The understanding of the structure-property relationship of semiconductor thin films is essential to improve the performance of semiconductor devices. We apply our original thin film deposition technique to Zintl-phase semiconductors to deepen the fundamental understanding of semiconductor thin films.4. Group-IV ₂D nanosheets
Group-IV ₂D nanosheets are a class of layered semiconductors having attractive properties such as high theoretical carrier mobility and large band gaps. To pioneer the applications to high performance semiconductor devices, we are studying thin film synthesis techniques and physical properties.Explanatory Pictures of Research Activities
Recent Research Papers and Achievements
- K. O. Hara, et al., J. Alloys Compd. 966, 171588 (2023).
- K. O. Hara, Sol. Energy 245, 136 (2022).